Passivator for gate dielectric

ABSTRACT

Embodiments disclosed herein relate to formation of a gate structure of a device, such as in a replacement gate process, and the device formed thereby. In an embodiment, a method includes conformally forming a gate dielectric layer on a fin extending from a substrate and along sidewalls of gate spacers over the fin, conformally depositing a dummy layer over the gate dielectric layer during a deposition process using a silicon-containing precursor and a dopant gas containing fluorine, deuterium, or a combination thereof, the dummy layer as deposited comprising a dopant of fluorine, deuterium, or a combination thereof, performing a thermal process to drive the dopant from the dummy layer into the gate dielectric layer, removing the dummy layer, and forming one or more metal-containing layers over the gate dielectric layer.

BACKGROUND

When fabricating field effect transistors (FETs), such as fin FETs(FinFETs), device performance can be improved by using a metal gateelectrode instead of a polysilicon gate electrode. Formation of themetal gate electrode may include sequentially forming a gate dielectriclayer, a barrier layer, a work function layer, and a metal liner layerin a high aspect ratio trench, followed by the trench filling with afill material. High-k dielectric materials have been used in an effortto reduce gate oxide leakage current while maintaining a desired gatecapacitance value. However, high-k dielectrics may suffer from highdensities of defects which compromise the device performance. However,with the decreasing in scaling, new challenges are presented.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a three-dimensional view of an example intermediate Fin FieldEffect Transistor (FinFET) structure in accordance with someembodiments.

FIGS. 2A-B, 3A-B, 4A-B, 5A-B, 6A-B, 7A-B, 8A-B, and 9A-B arecross-sectional views of respective intermediate structures along lineA-A and line B-B of FIG. 1 during an example method for forming asemiconductor device in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, forexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Generally, the present disclosure provides example embodiments relatingto formation of a gate structure of a device, such as in a replacementgate process, and the device formed thereby. More specifically, in someexamples, after a gate dielectric layer is deposited, a dummy layercontaining a passivating species, such as fluorine or deuterium, isconformally formed over the gate dielectric layer, and a thermal processis performed to cause the passivating species to diffuse from the dummylayer into the gate dielectric layer thereby passivating the gatedielectric layer. The dummy layer is then removed, and subsequent layersof the gate structure are formed, such as one or more work-functiontuning layers and a gate fill metal. Among other benefits, devicedegradation, such as time-dependent dielectric breakdown (TDDB), anddevice performance can be improved.

FIG. 1 illustrates a three-dimensional view of an example of anintermediate Fin Field Effect Transistor (FinFET) structure 40 inaccordance with some embodiments. A person having ordinary skill in theart will readily understand modifications to embodiments describedherein to achieve implementations in other contexts. Although variousoperations are illustrated in the drawings and described herein, nolimitation regarding the order of such steps or the presence or absenceof intervening steps is implied. Operations depicted or described assequential are, unless explicitly specified, merely done so for purposesof explanation without precluding the possibility that the respectivesteps are actually performed in concurrent or overlapping manner, atleast partially, if not entirely.

The intermediate FinFET structure 40 includes a fin 46 on asemiconductor substrate 42. The fin 46 may be formed from and extendedupwardly from a surface of the semiconductor substrate 42. Thesemiconductor substrate 42 includes isolation regions 44, and the fin 46protrudes through and above the isolation regions 44. In the exampleshown, the fin 46 protrudes from between the neighboring isolationregions 44. A dummy gate stack, which includes an interfacial dielectric62, a dummy gate layer 64 over the interfacial dielectric 62, and a mask66 over the dummy gate layer 64, is disposed along sidewalls and over atop surface of the fin 46. Source/drain regions 52 a and 52 b aredisposed in opposing regions of the fin 46 with respect to the dummygate stack. FIG. 1 further illustrates reference cross-sections that areused in subsequent figures. Cross-section A-A is in a plane along, e.g.,a channel in the fin 46 between the opposing source/drain regions 52 aand 52 b. Cross-section B-B is in a plane perpendicular to cross-sectionA-A and is along gate structures on the channel in the fin 46.Subsequent figures refer to these reference cross-sections for clarity.The following figures ending with an “A” designation illustratecross-sectional views at various instances of processing correspondingto cross-section A-A, and the following figures ending with a “B”designation illustrate cross-sectional views at various instances ofprocessing corresponding to cross-section B-B. In some figures, somereference numbers of components or features illustrated therein may beomitted to avoid obscuring other components or features.

FIGS. 2A-B through 9A-B illustrate cross-sectional views of respectiveintermediate structures during an example method for forming asemiconductor device in accordance with some embodiments. Thesemiconductor device can be a Field Effect Transistor (FET), which maybe a FinFET like shown in FIG. 1, a planar FET, a Horizontal Gate AllAround (HGAA) FET, or any suitable device. FIGS. 2A-B illustrate asemiconductor substrate 42 with at least a portion of the semiconductordevice formed thereon. The semiconductor substrate 42 may be or includea bulk semiconductor, a semiconductor-on-insulator (SOI) substrate, orthe like, which may be doped (e.g., with a p-type or an n-type dopant)or undoped. In some embodiments, the semiconductor material of thesemiconductor substrate 42 may include an elemental semiconductor suchas silicon (Si) or germanium (Ge); a compound semiconductor; an alloysemiconductor; or a combination thereof. Generally, fins 46 can beformed in the semiconductor substrate 42 by etching trenches in thesemiconductor substrate 42 using photolithography and etching processes.Insulating material, such as silicon oxide, silicon nitride, the like,multi-layers thereof, or a combination thereof, can be deposited in thetrenches and recessed to form the isolation regions 44 with the fins 46protruding therefrom.

The interfacial dielectric 62, dummy gate layer 64, and mask layer 66for the dummy gate stack may be formed by sequentially forming ordepositing the respective layers by any suitable processes, and thenpatterning those layers into the dummy gate stack. For example, theinterfacial dielectric 62 may include or be silicon oxide, siliconnitride, the like, or multilayers thereof; the dummy gate layer 64 mayinclude or be silicon (e.g., amorphous silicon or poly-silicon) or anysuitable material; and the mask layer 66 may include or be siliconnitride, silicon oxynitride, silicon carbon nitride, the like, or acombination thereof. The layers for the interfacial dielectric 62, dummygate layer 64, and mask layer 66 may then be patterned to form the dummygate stack, for example, using photolithography and one or more etchprocesses.

FIGS. 2A-B illustrate the formation of gate spacers 68 along sidewallsof the dummy gate stack (e.g., sidewalls of the interfacial dielectric62, dummy gate layer 64, and mask layer 66) and over the fin 46 on thesemiconductor substrate 42. The gate spacers 68 may be formed byconformally depositing one or more layers for the gate spacers 68 andanisotropically etching the one or more layers, for example. The one ormore layers for the gate spacers 68 may include or be silicon nitride,silicon oxynitride, silicon carbon nitride, the like, multi-layersthereof, or a combination thereof.

Source/drain regions 70 are then formed in the fin 46 on opposing sidesof the dummy gate stack. In some examples, the source/drain regions 70are formed by implanting dopants into the fin 46 using the dummy gatestack and gate spacers 68 as a mask. In other examples, such asillustrated, the fin 46 may be recessed, by an etching process, usingthe dummy gate stack and gate spacers 68 as a mask, and epitaxialsource/drain regions 70 may be epitaxially grown in the recesses. Theepitaxy source/drain regions 70 may include or be silicon germanium,silicon carbide, silicon phosphorus, germanium, a III-V compoundsemiconductor, a II-VI compound semiconductor, or the like. Epitaxialsource/drain regions 70 may be raised in relation to the fin 46, asillustrated. The epitaxial source/drain regions 70 may be doped byin-situ doping during the epitaxial growth and/or by implantation afterthe epitaxial growth. Hence, source/drain regions 70 can be formed byepitaxial growth, and possibly with implantation, on opposing sides ofthe dummy gate stack.

FIGS. 3A-B illustrate the formation of a first interlayer dielectric(ILD) 72 over the fin 46 of the semiconductor substrate 42 and along thegate spacers 68. Although not specifically illustrated, a contact etchstop layer (CESL) may be conformally formed over the fin 46 of thesemiconductor substrate 42 and along the gate spacers 68, and the firstILD 72 can be formed over the CESL, in some examples. Generally, an etchstop layer can provide a mechanism to stop an etch process when forming,e.g., contacts or vias. An etch stop layer may be formed of a dielectricmaterial having a different etch selectivity from adjacent layers, forexample, the first ILD 72. For example, the CESL may be conformallydeposited over the fin 46, dummy gate stack, and gate spacers 68. TheCESL may comprise or be silicon nitride, silicon carbon nitride, siliconcarbon oxide, carbon nitride, the like, or a combination thereof. Then,for example, the first ILD 72 is deposited over the CESL. The first ILD72 may include or be silicon dioxide, a low-k dielectric material (e.g.,a material having a dielectric constant lower than silicon dioxide),silicon oxynitride, phosphosilicate glass (PSG), borosilicate glass(BSG), borophosphosilicate glass (BPSG), undoped silicate glass (USG),fluorinated silicate glass (FSG), organosilicate glasses (OSG), SiOxCy,Spin-On-Glass, Spin-On-Polymers, silicon carbon material, a compoundthereof, a composite thereof, the like, or a combination thereof.

The first ILD 72 can be planarized, such as by a Chemical MechanicalPolish (CMP), after being deposited. The top surface of the first ILD 72is planarized to be coplanar with the top surface of the dummy gatelayer 64 to thereby expose the dummy gate layer 64 through the first ILD72. The planarization may remove the mask layer 66 of the dummy gatestack (and, in some instances, upper portions of the gate spacers 68),and accordingly, the top surface of the dummy gate layer 64 of the dummygate stack is exposed through the first ILD 72.

FIGS. 4A-B illustrate the removal of the dummy gate stack, which forms arecess 74 between the gate spacers 68. Once exposed through the firstILD 72, the dummy gate layer 64 and interfacial dielectric 62 of thedummy gate stack are removed, such as by one or more etch processes.

FIGS. 5A-B illustrate the formation of, among others, an interfacialdielectric 80, a gate dielectric layer 82, and a barrier layer 86 in therecess 74. In some examples, such as illustrated, the interfacialdielectric 80 is formed on the fin 46 of the semiconductor substrate 42exposed through the recess 74 and between the gate spacers 68. Theinterfacial dielectric 80 can be, for example, an oxide formed bythermal or chemical oxidation. In some examples, the interfacialdielectric 62 of the dummy gate stack can remain and be in the place ofthe interfacial dielectric 80. In further examples, the interfacialdielectric 80 may result from various processing steps, such as being anative oxide formed as a result of a cleaning process. In otherexamples, the interfacial dielectric 80 may be omitted.

The gate dielectric layer 82 is conformally deposited in the recess 74.For example, the gate dielectric layer 82 is deposited over theinterfacial dielectric 80, along sidewalls 73 of the gate spacers 68,and over top surfaces of the gate spacers 68 and first ILD 72. The gatedielectric layer 82 and the interfacial dielectric 80 may be describedas a high-k gate stack. The gate dielectric layer 82 can be or includesilicon oxide, silicon nitride, a high-k dielectric material,multilayers thereof, or other dielectric material. A high-k dielectricmaterial may have a k value of about 4 or greater, for example about 7.0or greater, and may include a metal oxide of or a metal silicate of Hf,Al, Zr, La, Mg, Ba, Ti, Pb, or a combination thereof. Some examples forthe gate dielectric layer 82 may include, but are not limited to, TiO₂,HfO₂, HfZrO, Ta₂O₃, HfSiO₄, ZrO₂, ZrSiO₂, etc. In some embodiments, thegate dielectric layer 82 is hafnium oxide (HfO₂). The gate dielectriclayer 82 can be deposited by atomic layer deposition (ALD), plasmaenhanced chemical vapor deposition (PECVD), molecular beam deposition(MBD), or any suitable deposition technique. The gate dielectric layer82 can have a thickness in a range from about 5 Å to about 25 Å.

The barrier layer 86 is conformally deposited over the gate dielectriclayer 82. The barrier layer 86 may include or be tantalum nitride,tantalum-silicon nitride, tantalum-carbon nitride, tantalum-aluminumnitride, titanium nitride, titanium-silicon nitride, titanium-carbonnitride, titanium-aluminum nitride, aluminum nitride, the like, or acombination thereof, and may be deposited by ALD, PECVD, MBD, or anysuitable deposition technique. In some embodiments, the barrier layer 86is a titanium-silicon nitride (TSN).

FIGS. 5A-B further illustrates a dummy layer 88 is conformally depositedover the barrier layer 86. It has been observed that the gate dielectriclayer 82 may suffer from high densities of interfacial and bulk defectsgenerated during the formation of the gate dielectric layer 82 or thesubsequent high temperature processes. These high densities ofinterfacial and bulk defects could increase carrier scattering, degrademobility, and reduce drain current for the subsequent gate. Variousembodiments may provide a conformal dummy layer 88 over the gatedielectric layer 82, which may address such problems. The dummy layer 88contains passivating species 87 that can be diffused or driven into thegate dielectric layer 82 and passivate interfacial and/or bulk defectsfor any of a plurality of layers which make up the replacement gatestructure. A subsequent thermal process (e.g., a rapid thermal annealprocess) can be performed to help incorporate the passivating species 87into the gate dielectric layer 82. The conformal nature of the dummylayer 88 helps ensure the passivating species is uniformly distributedthroughout the gate dielectric layer 82, which is also conformallydeposited over the interfacial dielectric 80, along sidewalls 73 of thegate spacers 68, and over top surfaces of the gate spacers 68 and firstILD 72. The passivating species in the gate dielectric layer 82 caneffectively reduce defect densities, for example by passivation ofinterfacial dangling bonds and bulk oxygen vacancies in or at thesurface of the gate dielectric layer 82, which in turn may reduce oxideleakage current, improve threshold voltage stability, and generallyimprove device performance.

Examples described herein use fluorine, deuterium, or both, as a dopantor passivating species, and hence, the dummy layer 88 may containfluorine, deuterium, or both. Description with respect to fluorine ordeuterium herein may be more broadly and generally applied to anyappropriate passivating species. In some embodiments, the dummy layer 88is conformally deposited on the barrier layer 86. The dopants orpassivating species are in-situ doped during deposition or formation ofthe dummy layer. For example, fluorine and/or deuterium are incorporatedinto the dummy layer 88 while the dummy layer 88 is deposited.Therefore, the dummy layer 88 as deposited may contain fluorine,deuterium, or both. Inset 89 in FIG. 5A is a partially enlarged viewshowing the passivating species 87 (represented by black blocks) isformed in the dummy layer 88. The dummy layer 88 may include or be asilicon layer, for example a polysilicon layer or an amorphous siliconlayer that includes the passivating species 87. In some embodiments, thedummy layer 88 is an amorphous silicon layer that includes thepassivating species 87.

The dummy layer 88 may be deposited by a chemical vapor deposition (CVD)process, such as thermal CVD, cyclic CVD, PECVD, or cyclic PECVD; an ALDprocess, such as thermal ALD, plasma-enhanced ALD, radical-enhanced ALD;or any other deposition technique suitable for forming a conformal film.In various embodiments, the dummy layer 88 can have a thickness in arange from about 5 Å to about 50 Å, for example about 10 Å to about 30Å. An amount of fluorine or deuterium available to diffuse from thedummy layer 88 into the gate dielectric layer 82 may be affected by thethickness of the dummy layer 88, which in turn can determine a volume ofthe dummy layer 88, and the concentration of fluorine and/or deuteriumin the dummy layer 88. A higher amount of fluorine or deuteriumavailable for diffusion can increase an amount of fluorine or deuteriumto be diffused into the gate dielectric layer 82.

The dummy layer 88 may be formed by exposing the substrate surface ofthe intermediate FinFET structure 40 to a gas mixture of asilicon-containing precursor and a dopant gas at elevated temperatures.The term “substrate surface” in this disclosure is intended to includethe exposed surface of a film/layer or partial film/layer that has beendeposited onto a substrate, such as the semiconductor substrate 42, andthe exposed surface of the newly deposited film/layer can also becomethe substrate surface prior to any subsequent process(es). In this case,the substrate surface at this stage of the processing refers to theexposed surface of the dummy layer 88. Suitable silicon-containingprecursors may include silanes, halogenated silanes, or any combinationthereof. Silanes may include silane (SiH₄) and higher silanes with theempirical formula Si_(x)H_((2x+2)), such as disilane (Si₂H₆), trisilane(Si₃H₈), and tetrasilane (Si₄H₁₀). Halogenated silanes may include, butare not limited to, a chlorinated silane, such as monochlorosilane(SiH₃Cl), dichlorosilane (Si₂H₂Cl₂), trichlorosilane (SiHCl₃),tetrachlorosilane (SiCl₄), hexachlorodisilane (Si₂Cl₆),octachlorotrisilane (Si₃Cl₈). In some embodiments, thesilicon-containing precursor may use organosilanes which may includecompounds with the empirical formula R_(y)Si_(x)H_((2x+2-y)), where R isindependently methyl, ethyl, propyl, or butyl, such as methylsilane((CH₃)SiH₃), dimethylsilane ((CH₃)₂SiH₂), ethylsilane ((CH₃CH₂)SiH₃),methyldisilane ((CH₃)Si₂H₅), dimethyldisilane ((CH₃)₂Si₂H₄),hexamethyldisilane ((CH₃)₆Si₂), tris(dimethylamino)silane (TDMAS), andany combination thereof.

Depending on the dopant desired in the dummy layer 88, the dopant gasmay be a fluorine-containing gas, a deuterium-containing gas, or both.Suitable fluorine-containing gas may include, but is not limited to,silicon tetrafluoride (SiF₄), fluorine (F₂), nitrogen trifluoride (NF₃),tetrafluorohydrazine (N₂F₄), trifluoromethane (CHF₃), fluorinatedhydrocarbons having a general formula of C_(x)F_(y) (x>1, y>1), thelike, or any appropriate combination thereof. In some cases, thefluorine-containing gas may be carbon-free. In some embodiments, thefluorine-containing gas is SiF₄. The use of SiF₄ may be advantageous insome applications as it offers minimized aggressive etch component ascompared to other fluorine-containing gas at high temperatures.

Suitable deuterium-containing gas may include, but is not limited to,deuterium (D₂), deuterated silane (SiD₄), deuterated disilane (Si₂D₆),dichlorosilane deuterium (SiD₂Cl₂), trichlorosilane deuterated silane(SiDCl₃), chlorine deuterated silane (SiD₃Cl), or any appropriatecombination thereof. In some embodiments, the deuterium-containing gasis SiD₄.

In some embodiments, the silicon-containing precursor is flowed into theprocess chamber in which the intermediate FinFET structure 40 isdisposed at a first volumetric flowrate, and the dopant gas is flowedinto the process chamber at a second volumetric flowrate. A ratio of thefirst volumetric flowrate to the second volumetric flowrate can becontrolled in a range from about 8:1 to about 20:1, such as from about10:1 to about 18:1, for example about 12:1 to about 15:1.

In some embodiments, the dummy layer 88 is a fluorine-doped silicondeposited by a CVD process. Example CVD process may include: providing awafer, such as the semiconductor substrate 42, into a CVD chamber andmaintaining the chamber at a temperature in a range from about 350° C.to about 550° C., for example about 400° C. to about 450° C., and at apressure in a range from about 1 mTorr to about 100 Torr, such as about1.5 mTorr to about 50 mTorr. The silicon-containing precursor, such asSiH₄, and a fluorine-containing precursor, such as SiF₄, are introducedsimultaneously or sequentially into the CVD chamber. Thesilicon-containing precursor and the fluorine-containing precursor canbe pre-mixed and introduced as a gas mixture into the CVD chamber. Insome examples, the silicon-containing precursor and thefluorine-containing precursor can be introduced separately into the CVDchamber. The duration of the process for fluorination may be in a rangefrom about 2 seconds to about 180 seconds, such as about 15 seconds toabout 60 seconds, for example about 20 seconds to about 35 seconds.Generally, the duration and temperature(s) at which the dummy layer 88is in the intermediate structure can affect how much fluorine diffusesinto the gate dielectric layer 82. A higher temperature process and/or alonger duration can increase the amount of fluorine that diffuses intothe gate dielectric layer 82. This process may be repeated for multiplecycles until a pre-determined thickness of the dummy layer 88 isreached.

Varying the thickness of the dummy layer 88 can increase or decrease theamount of passivating species (e.g., fluorine or deuterium) available todiffuse into the gate dielectric layer 82, and therefore, can increaseor decrease the amount of passivating species that diffuse into the gatedielectric layer 82. Similarly, increasing or decreasing the thicknessof the barrier layer 86 can also increase or decrease the ability ofpassivating species to diffuse through the barrier layer 86, and cantherefore increase or decrease the amount of passivating species thatdiffuse into the gate dielectric layer 82. In various embodiments, thedummy layer 88 may have a thickness in a range of about 10 Å to about 50Å, while the barrier layer 86 may have a thickness in a range of about 5Å to about 30 Å.

In some embodiments where the silicon-containing precursor and thefluorine-containing precursor are introduced sequentially, the reactantsmay be introduced into the CVD chamber in any sequence (e.g., asilicon-containing precursor pulse and then a fluorine-containingprecursor pulse, or vice versa). In either case, a purge gas (e.g., aninert gas such as argon) and/or a pump evacuation may be providedbetween the silicon-containing precursor and the fluorine-containingprecursor. In such a case, the silicon-containing precursor can beintroduced into the CVD chamber with a pulse in a range from about 2seconds to about 30 seconds, such as about 5 seconds to about 20seconds, followed by the purge gas and/or pump evacuation for a durationin a range from about 5 seconds to about 10 seconds. Then, thefluorine-containing precursor is introduced into the CVD chamber with apulse in a range from about 1 second to about 10 seconds, such as about2 seconds to about 8 seconds, for example about 3 seconds to about 5seconds. This process may be repeated for multiple cycles until apre-determined thickness of the dummy layer 88 is reached.

In some embodiments, the dummy layer 88 is fluorine-doped silicondeposited by an ALD process. Example ALD processes may include:providing a wafer, such as the semiconductor substrate 42, into an ALDchamber and maintaining the chamber at a temperature in a range fromabout 220° C. to about 450° C., for example about 250° C. to about 400°C., and at a pressure in a range from about 1 mTorr to about 10 Torr,such as about 1.5 mTorr to about 5 Torr. The ALD process may includesequential introduction of pulses of a first precursor, such as thesilicon-containing precursor, and a second precursor, such as the dopantgas. For example, one cycle for the sequential introduction of a firstprecursor and a second precursor may include a pulse of the firstprecursor, followed by a pulse of a purge gas and/or pump evacuation,followed by a pulse of a second precursor, and followed by a pulse ofthe purge gas and/or pump evacuation. Likewise, such a cycle is repeateduntil a pre-determined thickness (e.g., about 10 Å to about 30 Å) of thedummy layer 88 is reached.

In either a CVD or ALD process, a plasma may be used to help facilitatedissociation of the precursors into species or radicals. Plasma may begenerated by coupling an electromagnetic power, for example, an RFpower, to the gas mixture (of the silicon-containing precursor and thefluorine-containing precursor) or to each pulse of the precursor duringthe CVD or ALD process. The RF power may be switched off and only thepurge gas is supplied into the process chamber. If plasma is used, theRF power may be operated at a power in a range from about 5 Watts toabout 5000 Watts, such as about 150 Watts to about 1000 Watts, and afrequency in a range from about 1 MHz and about 60 MHz. for exampleabout 13.56 MHz. The plasma may have a power density in a range fromabout 1 Watts/cm² to about 10 Watts/cm², such as about 2 Watts/cm² toabout 8 Watts/cm².

A person having ordinary skill in the art should readily understand thatthe above process(es) and parameters may be equally applicable to theformation of a dummy layer 88 including or being deuterium-dopedsilicon. The parameters discussed in this disclosure may vary dependingupon the application and/or the sizes of respective components of thesemiconductor device structure.

After the dummy layer 88 is conformally deposited on the barrier layer86, one or more thermal processes are performed to facilitate diffusionof the passivating species 87, or to drive the passivating species 87,from the dummy layer 88 into the gate dielectric layer 82. The gatedielectric layer 82 thereafter comprises fluorine, deuterium, or both.As a result, a conformal fluorinated or deuterated gate dielectric layer82 is formed. The passivating species 87 can passivate the gatedielectric layer 82 by filling the oxygen vacancies in the gatedielectric layer 82 and/or attaching to dangling bonds. Therefore,charge trapping and interfacial charge scattering can be reduced.Particularly, since fluorine and/or deuterium are diffused from theconformal dummy layer 88 into the gate dielectric layer 82, the gatedielectric layer 82 may be doped with fluorine and/or deuterium moreconformally and with better coverage, as compared to conventionalion-implantation process where side or bottom portions of the gatedielectric layer may not receive a full dose of the dopant implant dueto the three-dimensional geometry of the FinFET device. Thus, reductionof defects within the gate stack may not be effectively performed alongthe side or bottom portions of the gate dielectric layer.

FIGS. 6A-B illustrate the intermediate FinFET structure 40 at anintermediate stage of processing in which some of the passivatingspecies 87 have been diffused into the gate dielectric layer 82 from thedummy layer 88. Depending on the duration of the process, the majorityof the passivating species 87 may remain in the dummy layer 88 with adecreasing concentration from the interface between the dummy layer 88and the barrier layer 86 toward the gate dielectric layer 82. In someexamples, the passivating species 87 can distribute throughout the gatedielectric layer 82 after the one or more thermal processes. Inset 91 inFIG. 6A is partially enlarged view showing the dummy layer 88 and thebarrier layer 86 may have a detectable amount of the passivating species87 after the one or more thermal processes in some cases.

The gate dielectric layer 82 may generally contain an amount of thepassivating species 87 less than an amount of the passivating species 87in the dummy layer 88 due to a small portion of the passivating speciesmight have been trapped or left in the barrier layer 86 and the dummylayer 88. In some embodiments, the gate dielectric layer 82 may containa concentration of fluorine or deuterium (the passivating species 87) ina range from about 1 at. % to about 15 at. %, such as about 3 at. % toabout 12 at. %, for example about 6 at. % to about 10 at. %. In someembodiments, the gate dielectric layer 82 may contain a mixture offluorine and deuterium, where respective concentrations of fluorine anddeuterium are each in a range from about 1 at. % to about 15 at. %. Thepassivating of the gate dielectric layer 82 may be less effective if theconcentration of fluorine or deuterium in the gate dielectric layer 82is below about 1 at. %. Controlling the concentration of fluorine ordeuterium in the gate dielectric layer 82 to be in a range from about 1at. % to about 15 at. % can passivate interfacial and/or bulk defects.Having the concentration of fluorine or deuterium be over 15 at. % canbe problematic because excessive amount of fluorine and/or deuterium canreplace the oxide atoms in the lattice structure of the gate dielectriclayer 82 and cause the oxide atoms to move toward, and react with, theinterfacial dielectric 80. Thus, the interfacial dielectric 80 maybecome thicker, which in turn lowers the dielectric constant of theinterfacial dielectric 80 and/or the gate-to-channel capacitance and/orundesirably affects the electrical properties of the device.

The concentration of the passivating species 87 may be a gradient in thegate dielectric layer 82 along the thickness of the gate dielectriclayer 82. For example, portions of the gate dielectric layer 82 inwardto the gate replacement structure (e.g., distal from respective gatespacers 68 on which vertical portions of the gate dielectric layer 82are disposed, and distal from the semiconductor substrate 42 on which ahorizontal portion of the gate dielectric layer 82 is disposed) may havea greatest concentration in the gate dielectric layer 82, and theconcentration of passivating species 87 decreases as the gate dielectriclayer 82 is traversed away from the portions having the greatestconcentration (e.g., traversed in an outwardly direction of thereplacement gate structure). Such a gradient of the concentration of thepassivating species may result from diffusion caused by the one or morethermal process(es) described herein.

In some embodiments, the passivating species 87 may also diffuse into atop portion of the interfacial dielectric 80. Inset 93 in FIG. 6A is apartially enlarged view showing a small amount of passivating species 87(represented by black blocks) are present in the top portion of theinterfacial dielectric 80 after one or more thermal process(es). Thepassivating species 87 may diffuse into the interfacial dielectric 80and form a surface region 95 having a first thickness “T1” and theinterfacial dielectric 80 may have a second thickness “T2”, and theratio of “T1” to “T2” can be in a range from about 1:10 to about 1:60,such as about 1:20 to about 1:40, for example about 1:30.

The one or more thermal processes may be an in-situ process, e.g., theone or more thermal processes are performed in the same process chamberused to form the dummy layer 88, while maintaining the vacuum of theprocess chamber. In some cases, the one or more thermal processes may beperformed by transferring the wafer, e.g., the intermediate FinFETstructure 40, to another process chamber fluidly connected to theprocess chamber used to deposit the dummy layer 88, while maintainingthe wafer under vacuum. Example thermal processes can be at atemperature in a range from about 300° C. to about 850° C., for exampleabout 350° C. to about 450° C., and for a duration of about 15 secondsto about 240 seconds, for example about 60 seconds to about 100 seconds.

In some embodiments, the thermal process is a rapid thermal anneal (RTA)process, such as a spike anneal, impulse anneal, laser anneal, orflash-assist anneal. In such a case, the duration of the RTA process maybe on the order of a millisecond scale, such as about 0.1 millisecondsto about 500 milliseconds, for example about 1 millisecond to about 100milliseconds. In some cases, the duration of the RTA process may beabout 1 second to about 10 seconds. The temperature of the RTA processcan be from about 800° C. to about 1200° C., for example about 900° C. ARTA process may be advantageous as it can provide precise control ofprocessing temperature and time without damaging the semiconductordevice.

FIGS. 7A-B illustrate the removal of the dummy layer 88 after thethermal process(es). The dummy layer 88 may be removed by one or moreetch processes and cleaning process. For example, the dummy layer 88 maybe removed by an etch process selective to the materials of the dummylayer 88. The one or more etch processes can be, for example, anisotropic etch process, such as a wet etch like using phosphoric acid(H₃PO₄), or any suitable etch process. After the removal of the dummylayer 88, the underlying layer, e.g., the barrier layer 86, is exposed.

FIGS. 8A-B illustrate a first work-function tuning layer 100, a secondwork-function tuning layer 102, a barrier/adhesion layer 104, and a gatemetal fill 106 are sequentially formed over the barrier layer 86. Thefirst work-function tuning layer 100 is conformally deposited on thebarrier layer 86. The first work-function tuning layer 100 may includeor be titanium nitride (TiN), titanium-silicon nitride (TSN),titanium-carbon nitride, titanium-aluminum nitride, tantalum nitride,tantalum-silicon nitride (TaSi_(x)N_(y)), tantalum-carbon nitride,tungsten nitride, tungsten carbide, tungsten-carbon nitride, cobalt,platinum, the like, or a combination thereof, and may be deposited byALD, PECVD, MBD, or any suitable deposition technique. The firstwork-function tuning layer 100 can have a thickness in a range fromabout 5 Å to about 60 Å. The second work-function tuning layer 102 isconformally deposited on the first work-function tuning layer 100. Thesecond work-function tuning layer 102 may include or be titaniumaluminum carbide (TiAlC), a titanium aluminum alloy, tantalum-aluminumcarbide, the like, or a combination thereof, and may be deposited byALD, PECVD, MBD, or any suitable deposition technique. The secondwork-function tuning layer 102 can have a thickness in a range fromabout 10 Å to about 60 Å. In some examples, the first or secondwork-function tuning layer 100, 102 may be omitted. Other examples canhave various other configurations of work-function tuning layers toachieve a desired performance of the device to be formed. For example,any different number of work-function layers having various materialsand/or thicknesses may be used. In some instances, for example, a p-typeFET and an n-type FET may have different work-function tuning layer(s).

The barrier/adhesion layer 104 is conformally deposited on the secondwork-function tuning layer 102. The barrier/adhesion layer 104 mayinclude or be titanium nitride, titanium-silicon nitride,titanium-carbon nitride, titanium-aluminum nitride, tantalum nitride,tantalum-silicon nitride, tantalum-carbon nitride, tungsten nitride,tungsten carbide, tungsten-carbon nitride, the like, or a combinationthereof, and may be deposited by ALD, PECVD, MBD, or any suitabledeposition technique. The barrier/adhesion layer 104 can have athickness in a range from about 10 Å to about 50 Å. The gate metal fill106 is then deposited on the barrier/adhesion layer 104. The gate metalfill 106 can fill remaining recess 74 where the dummy gate stack wasremoved. The gate metal fill 106 may be or comprise a metal-containingmaterial such as tungsten, cobalt, ruthenium, aluminum, copper,multi-layers thereof, or a combination thereof. The gate metal fill 106can be deposited by ALD, PECVD, MBD, PVD, or any suitable depositiontechnique.

The gate metal fill 106, barrier/adhesion layer 104, secondwork-function tuning layer 102, and first work-function tuning layer 100may be substantially free of fluorine and deuterium (e.g., no traceableamount of fluorine and deuterium) since these layers are generallyformed after fluorinating or deuternating the gate dielectric layer 82.Therefore, the work-function of the transistor may be more easily tunedsince significant amounts of fluorine or deuterium are not presented inthose layers to significantly impact the layers, and hence, performanceof the transistor can be increased, such as an improved thresholdvoltage. In some cases, the gate metal fill 106, barrier/adhesion layer104, second work-function tuning layer 102, and first work-functiontuning layer 100 may have an insubstantial amount of fluorine and/ordeuterium resulting, e.g., from natural diffusion reaction betweenlayers, e.g., from the barrier layer 86 and gate dielectric layer 82.

FIGS. 9A-B illustrate the removal of excess portions of the gate metalfill 106, barrier/adhesion layer 104, second work-function tuning layer102, first work-function tuning layer 100, barrier layer 86, and gatedielectric layer 82 above the top surfaces of the first ILD 72 and gatespacers 68. For example, a planarization process, like a CMP, may beused to remove the portions of the gate metal fill 106, barrier/adhesionlayer 104, second work-function tuning layer 102, first work-functiontuning layer 100, barrier layer 86, and gate dielectric layer 82 abovethe top surfaces of the first ILD 72 and gate spacers 68. A replacementgate structure comprising the gate metal fill 106, barrier/adhesionlayer 104, second work-function tuning layer 102, first work-functiontuning layer 100, barrier layer 86, and gate dielectric layer 82 (e.g.,a fluorinated and/or deuterated gate dielectric layer) may therefore beformed.

FIGS. 9A-B further illustrate the formation of a second ILD 110. Thesecond ILD 110 is deposited over the first ILD 72, replacement gatestructure, and gate spacers 68. An etch stop layer (ESL) may beimplemented between, e.g., the first ILD 72 and the second ILD 110. Forexample, the ESL may be deposited over the first ILD 72, replacementgate structure, and gate spacers 68. Then, for example, the second ILD110 is deposited over the ESL. The ESL and the second ILD 110 can be orinclude the same or similar materials, and can be deposited using anyacceptable techniques, as described above with respect to the CESL andthe first ILD 72, respectively. The second ILD 110 can be planarized,such as by a CMP, after being deposited.

FIGS. 9A-B further illustrate the formation of conductive featuresthrough the second ILD 110 and first ILD 72 to the source/drain regions70. Openings are formed through the second ILD 110 and the first ILD 72.Each of the openings exposes a respective source/drain region 70. Theopenings may be formed using, for example, appropriate photolithographyand etch processes. A liner 112 may be formed in the openings. The liner112 can be conformally deposited along sidewalls of the openings and topsurfaces of the source/drain regions 70. The liner 112 may be adiffusion barrier layer, an adhesion layer, or the like. The liner 112may include or be titanium, titanium nitride, tantalum, tantalumnitride, or the like, and may be deposited by any suitable depositiontechnique. An anneal process may be performed to facilitate a reactionbetween at least respective portions of the liner 112 and thesource/drain regions 70 form silicide regions 114 at the respectivesource/drain regions 70. A conductive material 116 is then formed on theliner 112 in the openings. The conductive material 116 may be or includea metal, such as cobalt, tungsten, copper, aluminum, gold, silver,alloys thereof, the like, or a combination thereof, and may be depositedby any suitable deposition technique. A planarization process, such as aCMP, may be performed to remove excess conductive material 116 and liner112 from the top surface of the second ILD 110. The remaining liner 112,silicide regions 114, and conductive material 116 form the conductivefeatures to the respective source/drain regions 70.

Embodiments described in this disclosure relate to formation of a gatestructure of a device, such as in a replacement gate process, and thedevice formed thereby. In some examples, after a gate dielectric layeris deposited, a dummy layer containing a passivating species, such asfluorine or deuterium, is confomrally formed over the gate dielectriclayer, and a thermal process causes the passivating species to diffusefrom the dummy layer into the gate dielectric layer thereby passivatingthe gate dielectric layer. Fluorinating or deuternating the gatedielectric layer can passivate the gate dielectric layer by filling theoxygen vacancies and attaching to the dangling bonds at a surface of thegate dielectric layer and/or the channel in the semiconductor substrate.By fluorinating or deuternating the gate dielectric layer, chargetrapping and interfacial charge scattering can be reduced. By diffusingfluorine or deuterium from a conformal dummy layer into the gatedielectric layer, as described above, the gate dielectric layer may bedoped with fluorine or deuterium more conformally and with bettercoverage, which may be particularly advantageous for smaller technologynodes, such as 7 nm and smaller, and more particularly inthree-dimensional (3D) technology such as FinFETs. The improvedconformality of the fluorination or deuternation may permit reducedtime-dependent dielectric breakdown (TDDB) degradation and permitgreater reliability. Further, since some work-function tuning layers maybe formed after fluorinating or deuternating the gate dielectric layer,the work-function of the transistor may be more easily tuned sincesignificant amounts of fluorine are not in those layers to significantlyimpact the layers, and hence, performance of the transistor can beincreased, such as an improved threshold voltage.

An embodiment is a method. The method includes conformally forming agate dielectric layer on a fin extending from a substrate and alongsidewalls of gate spacers over the fin, conformally depositing a dummylayer over the gate dielectric layer during a deposition process using asilicon-containing precursor and a dopant gas containing fluorine,deuterium, or a combination thereof, the dummy layer as depositedcomprising a dopant of fluorine, deuterium, or a combination thereof,performing a thermal process to drive the dopant from the dummy layerinto the gate dielectric layer, removing the dummy layer, and formingone or more metal-containing layers over the gate dielectric layer.

Another embodiment is a method. The method includes forming aninterfacial dielectric along a surface of a fin extending from asubstrate, forming a gate dielectric layer over the interfacialdielectric, conformally depositing a dummy layer over the gatedielectric layer during a deposition process using a silicon-containingprecursor and a dopant gas containing fluorine, deuterium, or acombination thereof, the dummy layer as deposited comprising apassivating species, driving the passivating species from the dummylayer into the gate dielectric layer and into the interfacial dielectricto form a surface region containing the passivating species, removingthe dummy layer, and forming a metal gate electrode over the gatedielectric layer.

A further embodiment is a structure. The structure includes a substratehaving a fin extending from the substrate and a gate structure over thefin. The gate structure includes a gate dielectric layer comprisingdeuterium. The gate dielectric layer has a peak concentration of thedeuterium in a range from 1 atomic percentage to 15 atomic percentage ata region distal from the fin. The gate dielectric layer also has agradient concentration of the deuterium decreasing from the peakconcentration towards the fin.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method for semiconductor processing, the methodcomprising: conformally forming a gate dielectric layer on a finextending from a substrate and along sidewalls of gate spacers over thefin; conformally depositing a dummy layer over the gate dielectric layerduring a deposition process using a silicon-containing precursor and adopant gas containing fluorine, deuterium, or a combination thereof, thedummy layer as deposited comprising a dopant of fluorine, deuterium, ora combination thereof; performing a thermal process to drive the dopantfrom the dummy layer into the gate dielectric layer; removing the dummylayer; and forming one or more metal-containing layers over the gatedielectric layer.
 2. The method of claim 1, wherein the dummy layer isan amorphous silicon layer.
 3. The method of claim 1, wherein, afterforming the one or more metal-containing layers, the gate dielectriclayer comprises fluorine at a concentration in a range from about 1atomic percentage to about 15 atomic percentage.
 4. The method of claim1, wherein, after forming the one or more metal-containing layers, thegate dielectric layer comprises deuterium at a concentration in a rangefrom about 1 atomic percentage to about 15 atomic percentage.
 5. Themethod of claim 1, wherein, after forming the one or moremetal-containing layers, the gate dielectric layer comprises fluorineand deuterium, and respective concentrations of fluorine and deuteriumare each in a range from about 1 atomic percentage to about 15 atomicpercentage.
 6. The method of claim 1, wherein the dummy layer is formedby exposing the substrate to sequential pulses of (i) a gas mixturecontaining the silicon-containing precursor and the dopant gas, and (ii)a purge gas until a pre-determined thickness of the dummy layer isreached.
 7. The method of claim 1, wherein the dummy layer is formed byexposing the substrate to sequential pulses of the silicon-containingprecursor, a purge gas, and the dopant gas until a pre-determinedthickness of the dummy layer is reached.
 8. The method of claim 1,wherein the silicon-containing precursor comprises silanes, halogenatedsilanes, or a combination thereof, and the dopant gas comprises silicontetrafluoride (SiF₄), deuterated silane (SiD₄), or a combinationthereof.
 9. A method for semiconductor processing, the methodcomprising: forming an interfacial dielectric along a surface of a finextending from a substrate; forming a gate dielectric layer over theinterfacial dielectric; conformally depositing a dummy layer over thegate dielectric layer during a deposition process using asilicon-containing precursor and a dopant gas containing fluorine,deuterium, or a combination thereof, the dummy layer as depositedcomprising a passivating species; driving the passivating species fromthe dummy layer into the gate dielectric layer and into the interfacialdielectric to form a surface region containing the passivating species;removing the dummy layer; and forming a metal gate electrode over thegate dielectric layer.
 10. The method of claim 9, further comprising:forming a barrier layer between the gate dielectric layer and the dummylayer.
 11. The method of claim 9, wherein the interfacial dielectric hasa first thickness and the surface region has a second thickness, and aratio of the second thickness to the first thickness is in a range from1:20 to 1:40.
 12. The method of claim 9, wherein the dummy layer isfluorine-doped amorphous silicon deposited by a cyclic Chemical VaporDeposition (CVD) process or an Atomic Layer Deposition (ALD) process.13. The method of claim 9, wherein the dummy layer is deuterium-dopedamorphous silicon deposited by a cyclic Chemical Vapor Deposition (CVD)process or an Atomic Layer Deposition (ALD) process.
 14. The method ofclaim 9, wherein, after forming a metal gate electrode, the gatedielectric layer comprises passivating species at a concentration in arange from about 1 atomic percentage to about 15 atomic percentage. 15.The method of claim 9, wherein driving the passivating species from thedummy layer into the gate dielectric layer and into the interfacialdielectric is performed by a Rapid Thermal Anneal (RTA).
 16. A structurecomprising: a substrate having a fin extending from the substrate; and agate structure over the fin, the gate structure comprising: a gatedielectric layer comprising deuterium, the gate dielectric layer havinga peak concentration of the deuterium in a range from 1 atomicpercentage to 15 atomic percentage at a region distal from the fin and agradient concentration of the deuterium decreasing from the peakconcentration towards the fin.
 17. The structure of claim 16, furthercomprising: a work-function tuning layer over the gate dielectric layer;and a gate metal fill over the work-function tuning layer, wherein atleast one of the work-function tuning layer and the gate metal fill issubstantially free of fluorine.
 18. The structure of claim 17, whereinthe gate structure is disposed between a first gate spacer and a secondgate spacer, the first gate spacer and the second gate spacer being overthe fin, the gate dielectric layer further being along respectivesidewalls of the first gate spacer and the second gate spacer, the gatestructure further comprising: a barrier layer over the gate dielectriclayer, the work-function tuning layer being over the barrier layer; anda barrier/adhesion layer over the work-function tuning layer, the gatemetal fill being over the barrier/adhesion layer.
 19. The structure ofclaim 18, wherein the barrier layer comprises titanium-silicon nitrideor tantalum-silicon nitride.
 20. The structure of claim 16 furthercomprising: an interfacial dielectric along a surface of the fin, thegate dielectric layer being over the interfacial dielectric, and theinterfacial dielectric having a surface region comprising deuterium,wherein the surface region has a first thickness, and the interfacialdielectric has a second thickness, and a ratio of the first thickness tothe second thickness is in a range from 1:20 to 1:40.